High Speed Model for Max. Productivity
| UPH | Max. 10,000 | |
|---|---|---|
| Placement Accuracy | ±5 μm @ 3σ | |
| Substrate | Width | 50 ~ 330 mm (50 ~ 166 @ Dual Lane) |
| Length | 50 ~ 330 mm | |
| Thickness | 0.124 ~ 4.0 mm | |
| Die | Size | □0.5 ~ □32 mm |
| Thickness | 0.04 ~ 3.0 mm | |
| Die Supply | Wafer | Frame Size 8” / 12” (Wafer Size 6” ~ 12”) |
| Bump | Pitch | Min. 40 μm |
| Diameter | 30 ~ 500 μm | |
| Height | 30 ~ 500 μm | |
| Flux | Thickness | Min. 15 μm |
| Fluxing Accuracy | ±5 μm | |
| Bond Force | Max. 30 N | |
| Utility | Electric | 110/220 ~ 480 AVAC ±10% : 50 Hz, 60 Hz, 3 Phase/4 Wire |
| Power Consumption | Max. 3.5 kVA | |
| Compressed Air | 0.6 MPa (6 bar)/87 Psi : Consumption < 100 NI/min | |
| Vacuum | -0.085 MPa (-0.85 bar)/635 mmHg, Average < 50 NI/h, Peak 100 NI/h |
|
| Dimension (mm) | W1,681 x D1,460 x H1,430 |
